NCEP01T30T pb free product http://www.ncepower.com wuxi nce power semiconductor co., ltd page v1.0 1 nce n-channel super trench power mosfet description the NCEP01T30T uses super trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. both conduction and switching power losses are minimized due to an extremely low combination of r ds(on) and q g . this device is ideal for high-frequency switching and sy nchronous rectification. general features v ds =100v,i d =300a r ds(on) <2.1m ? @ v gs =10v excellent gate charge x r ds(on) product very low on-resistance r ds(on) 175 c operating temperature pb-free lead plating 100% uis tested application dc/dc converter ideal for high-frequency switching and synchronous rectification schematic diagram to-247 top view 100% uis tested! 100% ? vds tested! package marking and ordering information device marking device device package reel size tape width quantity NCEP01T30T NCEP01T30T to-247 - - - absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v drain current-continuous i d 300 a drain current-continuous(t c =100 ) i d (100) 220 a pulsed drain current i dm 1200 a maximum power dissipation p d 520 w derating factor 3.47 w/ single pulse avalanche energy (note 5) e as 3400 mj operating junction and st orage temperature range t j ,t stg -55 to 175 thermal characteristic thermal resistance,junction-to-case (note 2) r jc 0.29 /w
wuxi nce power semiconductor co., ltd page v1.0 2 NCEP01T30T pb free product http://www.ncepower.com electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 100 108 - v zero gate voltage drain current i dss v ds =100v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 3 5 v drain-source on-state resistance r ds(on) v gs =10v, i d =150a - 1.8 2.1 m ? forward transconductance g fs v ds =10v,i d =150a - 150 - s dynamic characteristics (note4) input capacitance c lss - 18950 - pf output capacitance c oss - 2090 - pf reverse transfer capacitance c rss v ds =50v,v gs =0v, f=1.0mhz - 146 - pf switching characteristics (note 4) turn-on delay time t d(on) - - - ns turn-on rise time t r - - - ns turn-off delay time t d(off) - - - ns turn-off fall time t f v dd =50v,i d =100a v gs =10v,r g =1.8 ? - - - ns total gate charge q g - 314 nc gate-source charge q gs - 115 nc gate-drain charge q gd v ds =50v,i d =100a, v gs =10v - 80 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i f = 150a - 1.2 v diode forward current (note 2) i s - - 300 a reverse recovery time t rr - 155 ns reverse recovery charge qrr t j = 25c, i f = i s di/dt = 100a/ s (note3) - 436 nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. eas condition : tj=25 ,v dd =50v,v g =10v,l=1mh,rg=25 ?
NCEP01T30T pb free product http://www.ncepower.com wuxi nce power semiconductor co., ltd page v1.0 3 test circuit 1) e as test circuit 2) gate charge test circuit 3) switch time test circuit
wuxi nce power semiconductor co., ltd page v1.0 4 NCEP01T30T pb free product http://www.ncepower.com typical electrical and thermal characteristics vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ) i d - drain current (a) i d - drain current (a) vgs gate-source voltage (v) i s - reverse drain current (a)
wuxi nce power semiconductor co., ltd page v1.0 5 NCEP01T30T pb free product http://www.ncepower.com vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 power de-rating t j -junction temperature( ) figure 10 current de-rating i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a) power dissipation (w)
wuxi nce power semiconductor co., ltd page v1.0 6 NCEP01T30T pb free product http://www.ncepower.com to-247 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.850 5.150 0.191 0.200 a1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 d 15.450 15.750 0.608 0.620 e1 3.500 ref 0.138 ref e2 3.600 ref 0.142 ref l 40.900 41.300 1.610 1.626 l1 24.800 25.100 0.976 0.988 l2 20.300 20.600 0.799 0.811 7.100 7.300 0.280 0.287 e 5.450 typ 0.215 typ h 5.980 ref 0.235 ref
wuxi nce power semiconductor co., ltd page v1.0 7 NCEP01T30T pb free product http://www.ncepower.com attention: any and all nce power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit y, such as life-support systems, aircraft' s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce power representative nearest you before us ing any nce power products described or contained herein in such applications. nce power assumes no responsibility for equipment failu res that result from us ing products at values that exceed, even momentarily, rated values (such as maximum ratings, operati ng condition ranges, or other parameters) listed in products specifications of any and al l nce power products described or contained herein. specifications of any and all nce powe r products described or contained herein st ipulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an in dependent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. strives to supply hi gh-quality high-reliability pr oducts. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce power believes information herein is accu rate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the nce power product that you intend to use. this catalog provides information as of sep.2010. specific ations and information herein are subject to change without notice.
|
